Impact of in-situ TRL reference impedance determination on parameter extraction
- This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.
Author: | Andrej Rumiantsev, Ralf Dörner, Friedrich LenkGND |
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URL: | http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6459080 |
ISBN: | 978-1-4673-2215-7 |
ISBN: | 978-2-87487-026-2 |
Title of the source (English): | Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012 |
Publisher: | IEEE |
Place of publication: | Piscataway, NJ |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2012 |
First Page: | 593 |
Last Page: | 596 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik |
Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik | |
Institution name at the time of publication: | Fakultät für Maschinenbau, Elektrotechnik und Wirtschaftsingenieurwesen (eBTU) / Ulrich-Rohde-Stiftungsprofessur für Hochfrequenz- und Mikrowellentechnik |
Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |