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Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3% of PAE

  • A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.

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Metadaten
Author: Stefan Gerlich, Peter Weger
DOI:https://doi.org/10.1109/LMWC.2013.2278285
ISSN:1531-1309
Title of the source (English):IEEE Microwave and Wireless Components Letters
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2013
Tag:Power amplifier
Volume/Year:23
Issue number:10
First Page:539
Last Page:541
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Schaltkreisentwurf
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Schaltkreisentwurf
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