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Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

  • Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance–voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer forGraphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance–voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.show moreshow less

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Author: Amirhasan Nourbakhsh, Christoph AdelmannORCiD, Yi Song, Chang Seung Lee, Inge Asselberghs, Cedric Huyghebaert, Simone Brizzi, Massimo TallaridaORCiD, Dieter SchmeißerORCiD, Sven van Elshocht, Marc Heyns, Jing Kong, Tomás Palacios, Stefan De Gendt
DOI:https://doi.org/10.1039/C5NR01128K
ISSN:2040-3364
ISSN:2040-3372
Title of the source (English):Nanoscale
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2015
Tag:Graphene Oxide; atomic layer deposition; capacitance-voltage; density functional theory; oxygen plasma treatment; photoelectron spectroscopy; seed layer
Volume/Year:2015
Issue number:7
First Page:10781
Last Page:10789
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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