• search hit 23 of 43
Back to Result List

The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties

  • Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Olaf Seifarth, Christian Walczyk, Grzegorz Lupina, Peter Zaumseil, Dieter SchmeißerORCiD, Hans-Joachim Müssig, Thomas Schroeder
URL:http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/df/session/6/contribution/5
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2009
First Page:S. 136
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.