The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties
- Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.
Author: | Olaf Seifarth, Christian Walczyk, Grzegorz Lupina, Peter Zaumseil, Dieter SchmeißerORCiD, Hans-Joachim Müssig, Thomas Schroeder |
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URL: | http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/df/session/6/contribution/5 |
ISSN: | 0420-0195 |
Title of the source (German): | Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44 |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2009 |
First Page: | S. 136 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |