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Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model

  • One major concern of channel engineering in nanotransistors is the coupling of the conduction channel to the source/drain contacts. In a number of previous publications, we have developed a semiempirical quantum model in quantitative agreement with three series of experimental transistors. On the basis of this model, an overlap parameter 0≤C≤1 can be defined as a criterion for the quality of the contact-to-channel coupling: A high level of C means good matching between the wave functions in the source/drain and in the conduction channel associated with a low contact-to-channel reflection. We show that a high level of C leads to a high saturation current in the ON-state and a large slope of the transfer characteristic in the OFF-state. Furthermore, relevant for future device miniaturization, we analyze the contribution of the tunneling current to the total drain current. It is seen for a device with a gate length of 26 nm that for all gate voltages, the share of the tunneling current becomes small for small drain voltages. WithOne major concern of channel engineering in nanotransistors is the coupling of the conduction channel to the source/drain contacts. In a number of previous publications, we have developed a semiempirical quantum model in quantitative agreement with three series of experimental transistors. On the basis of this model, an overlap parameter 0≤C≤1 can be defined as a criterion for the quality of the contact-to-channel coupling: A high level of C means good matching between the wave functions in the source/drain and in the conduction channel associated with a low contact-to-channel reflection. We show that a high level of C leads to a high saturation current in the ON-state and a large slope of the transfer characteristic in the OFF-state. Furthermore, relevant for future device miniaturization, we analyze the contribution of the tunneling current to the total drain current. It is seen for a device with a gate length of 26 nm that for all gate voltages, the share of the tunneling current becomes small for small drain voltages. With increasing drain voltage, the contribution of the tunneling current grows considerably showing Fowler–Nordheim oscillations. In the ON-state, the classically allowed current remains dominant for large drain voltages. In the OFF-state, the tunneling current becomes dominant.show moreshow less

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Author: Ulrich Wulf, Jan Kučera, Hans Richter, Manfred Horstmann, Maciej Wiatr, Jan Höntschel
URL:http://www.mdpi.com/2227-7390/5/4/68
DOI:https://doi.org/10.3390/math5040068
ISSN:2227-7390
Title of the source (English):Mathematics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2017
Tag:channel engineering; contact-to-channel coupling; nanotransistor; quantum transport; tunneling current; wave function overlap
Volume/Year:5
Issue number:4
Number of pages:17
Article number:ID 68
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Computational Physics
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