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Room temperature atomic layer deposited Al₂O₃ on CH₃NH₃PbI₃ characterized by synchrotron-based X-ray photoelectron spectroscopy

  • An ultrathin Al₂O₃ film deposited on methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency and stability. However, annealing at temperatures higher than 85°C degrades the CH₃NH₃PbI₃ perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al₂O₃ by atomic layer deposition on the perovskite at room temperature, however, besides pure Al₂O₃ some OH groups are found and the creation of lead and iodine oxides at the Al₂O₃/CH₃NH₃PbI₃ interface takes place.

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Metadaten
Author: Małgorzata KotORCiD, Chittaranjan DasORCiD, Karsten HenkelORCiDGND, Konrad Wojciechowski, Henry J. Snaith, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1016/j.nimb.2017.01.082
ISSN:0168-583X
ISSN:1872-9584
Title of the source (English):Nuclear Instruments and Methods in Physics Research B
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2017
Tag:Al₂O₃; Atomic layer deposition; Perovskite solar cells; Synchrotron-based X-ray photoelectron spectroscopy
Volume/Year:411
First Page:49
Last Page:52
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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