Room temperature atomic layer deposited Al₂O₃ on CH₃NH₃PbI₃ characterized by synchrotron-based X-ray photoelectron spectroscopy
- An ultrathin Al₂O₃ film deposited on methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency and stability. However, annealing at temperatures higher than 85°C degrades the CH₃NH₃PbI₃ perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al₂O₃ by atomic layer deposition on the perovskite at room temperature, however, besides pure Al₂O₃ some OH groups are found and the creation of lead and iodine oxides at the Al₂O₃/CH₃NH₃PbI₃ interface takes place.
Author: | Małgorzata KotORCiD, Chittaranjan DasORCiD, Karsten HenkelORCiDGND, Konrad Wojciechowski, Henry J. Snaith, Dieter SchmeißerORCiD |
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DOI: | https://doi.org/10.1016/j.nimb.2017.01.082 |
ISSN: | 0168-583X |
ISSN: | 1872-9584 |
Title of the source (English): | Nuclear Instruments and Methods in Physics Research B |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2017 |
Tag: | Al₂O₃; Atomic layer deposition; Perovskite solar cells; Synchrotron-based X-ray photoelectron spectroscopy |
Volume/Year: | 411 |
First Page: | 49 |
Last Page: | 52 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |