Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications
- A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.
Author: | Christian Wipf, Roland Sorge, Peter Weger |
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DOI: | https://doi.org/10.1109/SIRF.2011.5719310 |
ISBN: | 978-1-4244-8060-9 |
Title of the source (English): | Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 |
Publisher: | IEEE |
Place of publication: | Piscataway |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2011 |
First Page: | 121 |
Last Page: | 124 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Schaltkreisentwurf |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Schaltkreisentwurf |