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Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications

  • A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.

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Metadaten
Author: Christian Wipf, Roland Sorge, Peter Weger
DOI:https://doi.org/10.1109/SIRF.2011.5719310
ISBN:978-1-4244-8060-9
Title of the source (English):Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011
Publisher:IEEE
Place of publication:Piscataway
Document Type:Conference Proceeding
Language:English
Year of publication:2011
First Page:121
Last Page:124
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Schaltkreisentwurf
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Schaltkreisentwurf
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