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Electronic properties of the 2x1 3C-SiC surface reconstruction studied with resonant photoemission

  • We have studied the 2x1 reconstructed surface of the 3C-SiC polytype by means of photoemission spectroscopy. The reconstruction was characterized through Si2p and C1s core level and angle-integrated valence band spectroscopy, and confirmed by the observation of a two-domain 2x1 LEED pattern. The electronic properties of this surface were investigated by collecting valence band spectra at photon energies near the Si2p and C1s absorption edges. The results show a strong dependence of the photoemission intensity on the excitation energy with characteristic resonances for certain valence band features. With a detailed study of the resonances we are able to assign the electronic origin of the resonating states and the nature of the electronic transition near the absorption edges.

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Metadaten
Author: Massimo TallaridaORCiD, Rakesh Sohal, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/hl/session/5/contribution/2
ISBN:0420-0195
Title of the source (English):Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2006
First Page:S. 239
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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