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Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers

  • The chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers has been investigated by direct and inverse photoemission. Particular emphasis was placed on the impact of KCN etching, which significantly alters the surface composition and is best explained by a preferred etching of Cu and, to a lesser degree, Sn. As a consequence the surface band gap increased from (1.53 +/- 0.15) eV, which agrees with optically derived bulk band gap values, to (1.91 +/- 0.15) ev.

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Author: Marcus Bär, Björn-Arvid Schubert, Björn Marsen, Stefan Krause, Sujitra Pookpanratana, Thomas Unold, Lothar Weinhardt, Clemens Heske, Hans-Werner Schock
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2011
Tag:electronic surface structure; kesterite; thin-film solar cells
Quelle aus UBICO:Applied physics letters 99(2011)152111, 0003-6951
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
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