Influence of annealing in H atmosphere on the electrical properties of Al₃O₃ layers grown on p-type Si by the atomic layer deposition technique
Author: | Vladimir Kolkovsky, R. Stübner, Sergiu Langa, U. Wende, Bert Kaiser, Holger Conrad, Harald SchenkORCiD |
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DOI: | https://doi.org/10.1016/j.sse.2016.06.005 |
ISSN: | 0038-1101 |
Title of the source (English): | Solid-State Electronics |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2016 |
Volume/Year: | 123 |
First Page: | 89 |
Last Page: | 95 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Mikro- und Nanosysteme |