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A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale

  • Memristive devices integrated in 200 mm wafers manufactured in 130 nm CMOS technology with two different dielectrics, namely, a HfO2 monolayer and an Al2O3/HfO2 bilayer, have been measured. The cycle-to-cycle (C2C) and device-todevice (D2D) variability have been analyzed at the wafer scale using different numerical methods to extract the set (Vset) and reset (Vreset) voltages. Some interesting differences between both technologies were found in terms of switching characteristics

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Author: Eduardo Perez, David Maldonado, Mamathamba Kalishettyhalli Mahadevaiah, Emilio Perez-Bosch Quesada, Antonio Cantudo, Francisco Jimenez-Molinos, Christian WengerORCiD, Juan Bautista Roldan
DOI:https://doi.org/10.1109/CDE58627.2023.10339417
ISBN:979-8-3503-0240-0
Title of the source (English):14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023
Publisher:Institute of Electrical and Electronics Engineers (IEEE)
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2023
Tag:RRAM
Number of pages:5
Way of publication:Open Access
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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