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Advanced insights into the stoichiometry and kinetics of the reaction of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures

  • The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically. Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching.

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Metadaten
Author: Anja RietigORCiD, Thomas LangnerORCiD, Jörg AckerORCiDGND
ISBN:978-82-997357-9-7
Title of the source (English):Silicon for the Chemical and Solar Industry XV
Publisher:The Norwegian University of Science and Technology
Place of publication:Trondheim
Editor: Birger Andresen, Harry Rong, Merete Tangstad, Halvard Tveit, Ingrid Page
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2020
Tag:Raman; etch rate; etching; hydrogen; mass spectrometry; nitrous gases; silicon
First Page:145
Last Page:159
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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