Advanced insights into the stoichiometry and kinetics of the reaction of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures
- The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically. Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching.
Author: | Anja RietigORCiD, Thomas LangnerORCiD, Jörg AckerORCiDGND |
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ISBN: | 978-82-997357-9-7 |
Title of the source (English): | Silicon for the Chemical and Solar Industry XV |
Publisher: | The Norwegian University of Science and Technology |
Place of publication: | Trondheim |
Editor: | Birger Andresen, Harry Rong, Merete Tangstad, Halvard Tveit, Ingrid Page |
Document Type: | Conference publication peer-reviewed |
Language: | English |
Year of publication: | 2020 |
Tag: | Raman; etch rate; etching; hydrogen; mass spectrometry; nitrous gases; silicon |
First Page: | 145 |
Last Page: | 159 |
Faculty/Chair: | Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie |