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An (In Situ)² Approach: ALD and resPES Applied to Al₂O₃, HfO₂, and TiO₂ Ultrathin Films

  • Oxide surface coatings are of importance in tailoring interface properties with respect to surface passivation, adjustment of surface potentials, or providing active centers for surface reactions. In this contribution, we report about surface coatings prepared by the atomic layer deposition (ALD) method. ALD is known for its conformal growth of ultrathin, dense films which exhibit a low concentration of pinholes.

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Author: Karsten HenkelORCiDGND, Małgorzata KotORCiD, Matthias RichterGND, Massimo TallaridaORCiD, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1016/B978-0-12-409547-2.13852-1
ISBN:978-0-12-809739-7
ISBN:978-0-12-809894-3
Title of the source (English):Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, Vol. 3.1
Publisher:Elsevier
Place of publication:Oxford
Editor: Klaus Wandelt
Document Type:Part of a book (chapter)
Language:English
Year of publication:2018
Tag:Aluminum oxide (Al₂O₃); Atomic layer deposition (ALD); Band scheme; Hafnium oxide (HfO₂); Intrinsic charges; Intrinsic defects; Partial density of states (pDOS); Resonant photoelectron spectroscopy (resPES); Titanium oxide(TiO₂)
First Page:18
Last Page:26
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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