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Si(001) surface oxidation by N2O

  • Ultra-thin homogeneous oxynitride films are prepared on Si(001). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2Oat altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N2O pressure and the Si temperature. This isillustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) andphotoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitridelayers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.

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Metadaten
Author: Patrick Hoffmann, Ricardo Pablo Mikalo, Dieter SchmeißerORCiD
Document Type:Article
Language:English
Year of publication:2002
Tag:Interface; NO; Oxynitride; SI; SI(100); dielectric
Quelle aus UBICO:Journal of Non-Crystalline Solids 303(2002)1, S. 6-11, 0022-3093
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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