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Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

  • Na has deliberately been incorporated into Cu(In,Ga)Se2 (“CIGSe”) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 °C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Nasurface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and — for very high Na contents — indications for the formation of a (Cu,Na)–(In,Ga)–Se like compound. With increasing Nasurface content, also a shift of the photoemission lines to lower binding energies could be identified, which weNa has deliberately been incorporated into Cu(In,Ga)Se2 (“CIGSe”) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 °C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Nasurface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and — for very high Na contents — indications for the formation of a (Cu,Na)–(In,Ga)–Se like compound. With increasing Nasurface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of InCu defects.show moreshow less

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Author: Marcus Bär, X. Song, R. Caballero, Roberto Felix Duarte, Dominic Gerlach, Christian Kaufmann, Hans-Werner Schock, Regan G. Wilks
ISSN:1089-7550
Title of the source (English):Journal of Applied Physics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2012
Volume/Year:111
Issue number:3
First Page:034903
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
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