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2 MeV ion irradiation effects on AlGaN/GaN HFET devices

  • AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated.

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Author: G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, Friedrich LenkGND, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, Joachim Würfl, Günther Tränkle
URL:http://www.sciencedirect.com/science/article/pii/S0038110108000671
ISSN:0038-1101
Title of the source (English):Solid-State Electronics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2008
Volume/Year:52
Issue number:7
First Page:1011
Last Page:1017
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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