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Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

  • GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.

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Author: Shuyu Wen, Mohd Saif Shaikh, Oliver Steuer, Slawomir Prucnal, Jörg Grenzer, René Hübner, Marcin Turek, Krzysztof Pyszniak, Sebastian Reiter, Inga Anita FischerORCiD, Yordan M. Georgiev, Manfred Helm, Shaoteng Wu, Jun-Wei Luo, Shengqiang Zhou, Yonder Berencén
URL:https://pubs.aip.org/aip/apl/article/123/8/081109/2907921
DOI:https://doi.org/10.1063/5.0166799
ISSN:0003-6951
Title of the source (English):Applied Physics Letters
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2023
Tag:Alloys; C-MOS; Crystal structure; Electric currents; Electromagnetic radiation detectors; Ion beam analysis; Ion implantation; Photodetectors; Semiconductors
Volume/Year:123
Issue number:8
First Page:1
Last Page:7
Article number:081109
Way of publication:Open Access
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Experimentalphysik und funktionale Materialien
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