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Photoemission studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD

  • The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher values of the dielectric permittivity than for silicon dioxide. The silicon oxynitride layers (SiOxNy) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true.

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Metadaten
Author: Patrick Hoffmann
Contributor(s): Dieter SchmeißerORCiD, Romuald B. Beck, M. Cuch, M. Giedz, Andrzej Jakubowski
Document Type:Article
Language:English
Year of publication:2004
Tag:Photoelectron spectroscopies; Semiconductors; Synchrotron radiation; Thin films; Vapour deposition
Quelle aus UBICO:Journal of Alloys and Compounds 382/1-2 (2004) 228-233
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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