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Massively Strained VO2 Thin Film Growth on RuO2

  • Strain engineering vanadium dioxide thin films is one way to alter this material’s characteristic first order transition from semiconductor to metal. In this study, we extend the exploitable strain regime by utilizing the very large lattice mismatch of 8.78% occurring in the VO2/RuO2 system along the c axis of the rutile structure. We have grown VO2 thin films on single-domain RuO2 islands of two distinct surface orientations by atomic oxygen-supported reactive molecular beam epitaxy (MBE). These films were examined by spatially resolved photoelectron and X-ray absorption spectroscopy, confirming the correct stoichiometry. Low energy electron diffraction then reveals the VO2 films grow indeed fully strained on RuO2(110), exhibiting a previously unreported (2 × 2) reconstruction. On TiO2(110) substrates, we reproduce this reconstruction and attribute it to an oxygen-rich termination caused by the high oxygen chemical potential. On RuO2(100), on the contrary, the films grow fully relaxed. Hence, the presented growth method allows forStrain engineering vanadium dioxide thin films is one way to alter this material’s characteristic first order transition from semiconductor to metal. In this study, we extend the exploitable strain regime by utilizing the very large lattice mismatch of 8.78% occurring in the VO2/RuO2 system along the c axis of the rutile structure. We have grown VO2 thin films on single-domain RuO2 islands of two distinct surface orientations by atomic oxygen-supported reactive molecular beam epitaxy (MBE). These films were examined by spatially resolved photoelectron and X-ray absorption spectroscopy, confirming the correct stoichiometry. Low energy electron diffraction then reveals the VO2 films grow indeed fully strained on RuO2(110), exhibiting a previously unreported (2 × 2) reconstruction. On TiO2(110) substrates, we reproduce this reconstruction and attribute it to an oxygen-rich termination caused by the high oxygen chemical potential. On RuO2(100), on the contrary, the films grow fully relaxed. Hence, the presented growth method allows for simultaneous access to a remarkable strain window ranging from bulk-like structures to massively strained regions.show moreshow less

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Author: Simon FischerORCiD, Jon-Olaf KrisponeitORCiD, Michael FoersterORCiD, Lucia AballeORCiDGND, Jens FaltaORCiD, Jan Ingo FlegeORCiD
DOI:https://doi.org/10.1021/acs.cgd.0c00120
ISSN:1528-7483
ISSN:1528-7505
Title of the source (English):Crystal Growth & Design
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2020
Tag:XPEEM; low energy electron diffraction (LEED); low energy electron microscopy (LEEM); photoemission electron microscopy (PEEM); reactive molecular beam epitaxy (MBE); ruthenium dioxide (RuO2); strain engineering; vanadium dioxide (VO2); µLEED
Volume/Year:20
Issue number:4
First Page:2734
Last Page:2741
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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