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In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates

  • Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.

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Author: Felix LangeORCiD, Owen ErnstORCiD, Thomas Teubner, Carsten RichterORCiD, Martin Schmidbauer, Oliver Skibitzki, Thomas Schroeder, Peer SchmidtORCiD, Torsten Boeck
URL:https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0
DOI:https://doi.org/10.1088/2399-1984/ab82a0
ISSN:2399-1984
Title of the source (English):Nano Futures
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2020
Tag:Crystal growth; Germanium; Phase diagram; Silicon
Volume/Year:4
Issue number:3
First Page:1
Last Page:8
Article number:035006
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Anorganische Chemie
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