Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures
- n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis.
Author: | Klaus Müller, Andriy Goryachko, Yevgen Burkov, Carola Schwiertz, Markus Ratzke, J. Köble, Jürgen ReifGND, Dieter SchmeißerORCiD |
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ISSN: | 0379-6779 |
Title of the source (English): | Synthetic Metals |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2004 |
Tag: | OFET; Photoemission electron microscopy (PEEM); Scanning Kelvin probe microscopy (SKPM) |
Volume/Year: | 146 |
Issue number: | 3 |
First Page: | 377 |
Last Page: | 382 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |