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Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures

  • n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis.

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Author: Klaus Müller, Andriy Goryachko, Yevgen Burkov, Carola Schwiertz, Markus Ratzke, J. Köble, Jürgen ReifGND, Dieter SchmeißerORCiD
ISSN:0379-6779
Title of the source (English):Synthetic Metals
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2004
Tag:OFET; Photoemission electron microscopy (PEEM); Scanning Kelvin probe microscopy (SKPM)
Volume/Year:146
Issue number:3
First Page:377
Last Page:382
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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