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Developments of Graphene devices in 200 mm CMOS pilot line

  • Due to the unique electronic band structure, graphene has opened great potential to extend the functionality of a large variety of devices. Despite the significant progress in the fabrication of various graphene based microelectronic devices, the integration of graphene devices still lack the stability and compatibility with Si-technology processes. Therefore, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance. This study aims to explore various aspects of graphene research on a 200mm pilot line, with a focus on simulations and fabrication of graphene modulator. To be more precise, it includes design and fabrication of the layouts, necessary mask sets, creation of the flows, fabrication, and measurements of the Gr modulators on 200 mm wafers.

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Author: Mindaugas Lukosius, Rasuolė Lukose, Marco Lisker, P. K. Dubey, A. I. Raju, Daniele Capista, Farnaz Majnoon, A. Mai, Christian WengerORCiD
DOI:https://doi.org/10.1109/NMDC57951.2023.10343569
ISBN:979-8-3503-3546-0
Title of the source (English):Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023
Publisher:Institute of Electrical and Electronics Engineers (IEEE)
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2023
Tag:Graphene
First Page:505
Last Page:506
Way of publication:Open Access
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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