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Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

  • The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.

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Author: Mamathamba Kalishettyhalli Mahadevaiah, Eduardo Perez, Marco Lisker, Markus Andreas Schubert, Emilio Perez-Bosch Quesada, Christian WengerORCiD, Andreas Mai
DOI:https://doi.org/10.3390/electronics11101540
ISSN:2079-9292
Title of the source (English):Electronics : open access journal
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:HfO2; RRAM; filamentary switching
Volume/Year:11
Issue number:10
Number of pages:14
Article number:1540
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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