- The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene)(P(VDF-TrFE)) is used as insulating material for organic field effect tran-sistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV charac-teristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene)(P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate
insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic
nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore,
we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.