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P(VDF/TrFE) as ferroelectric insulation layer for organic field effect transistors

  • The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene)(P(VDF-TrFE)) is used as insulating material for organic field effect tran-sistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV charac-teristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene)(P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore, we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.

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Metadaten
Author: Klaus Müller, Karsten HenkelORCiDGND, Ioanna Paloumpa, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/cpp/session/23/contribution/28
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2006
First Page:S. 101
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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