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Field effect transistor of graphitized polyimide with P(VDF-TrFE) as gate insulator

  • Surfaces of polyimide films were graphitized by low-energy ion irradiation. The conductivity was between 10−5 to 200 S/cm [1]. We prepared field effect transistors using this material. Ferroelectric P(VDF-TrFE) was used as gate insulator. The thickness of P(VDF-TrFE) varied from 120 nm to 1200 nm. Properties of P(VDF-TrFE) were investigated by current-voltage measurements of metal/ P(VDF-TrFE)/metal capacitors. We have found that at room temperature, the coercive field of P(VDF-TrFE) does not depend on the film thickness. At lower temperatures the coercive field increases proportionally to the reciprocal temperature. Remnant polarization is 9.5 µC/cm2. It slightly rises with decreasing temperature. Our recent results of field effect mobility, carrier concentration and threshold voltage are presented. [1] I. Lazareva, Y. Koval, M. Alam, S. Strömsdörfer, P. Müller, Appl. Phys. Lett. 90, 262108 (2007)

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Author: I. Lazareva, Yuri Koval, P. Müller, Ioanna Paloumpa, Klaus Müller, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/df/session/11/contribution/6
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2008
First Page:S. 195
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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