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Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001)

  • For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm–1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.

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Metadaten
Author: Fatima Akhtar, Jaroslaw Dabrowski, Rasuole Lukose, Christian WengerORCiD, Mindaugas Lukosius
DOI:https://doi.org/10.1021/acsami.3c05860
ISSN:1944-8244
Title of the source (English):ACS Applied Materials & Interfaces
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2023
Tag:Chemical Vapor Deposition; Graphene
Volume/Year:15
Issue number:30
First Page:36966
Last Page:36974
Way of publication:Open Access
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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