• search hit 4 of 23
Back to Result List

On the transition from MoS2 single-layer to bilayer growth on the Au(111) surface

  • MoS2 is well known for changing from an indirect to a direct band-gap semiconductor as a single layer. Here, for the model system MoS2/Au(111), we present in-situ studies of the continued growth of micron-size single-layer MoS2 islands including the first formation of bilayer patches. We have used angle-resolved photoemission spectroscopy from micrometer sized regions to investigate the local band structure of the islands’ rims and centers, showing a prevalence for bilayer and single-layer formation at the rims and centers, respectively. The bilayer patches can clearly be identified locally on the few nanometer scale employing intensity-voltage low-energy electron microscopy as a fingerprinting method. Astonishingly, micro-spot low-energy electron diffraction hints toward the nucleation of the second layer of the MoS2 between the single layer MoS2 and the Au(111) substrate when the step bunches formed by the single-terrace growth mechanism become sufficiently high.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Moritz EwertORCiD, Lars BußORCiD, Francesca GenuzioORCiD, Tevfik Onur MenteşORCiD, Andrea LocatelliORCiD, Jens FaltaORCiD, Jan Ingo FlegeORCiD
URL:https://www.dpg-verhandlungen.de/year/2022/conference/regensburg/part/o/session/65/contribution/3
Title of the source (English):Verhandlungen der DPG
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference publication not peer-reviewed
Language:English
Year of publication:2022
Tag:angle-resolved photoemission spectroscopy; intensity-voltage; low-energy electron microscopy; micro-spot low-energy electron diffraction; single-terrace growth; step bunches
Series ; volume number:Verhandlungen der DPG
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.