Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization
- The authors propose the analysis of surface height histograms as a tool for the atomic layer deposition (ALD) growth characterization in the initial stage of the process. ALD of HfO2 on a Si(100)/SiO2 substrate was investigated in situ by ultra high vacuum atomic force microscope working in noncontact mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and H2O as precursors, were performed at 230 C. After each ALD cycle, the relation between the film growth and the root mean square surface roughness was studied. Parameters equivalent to HfO2 layer thickness, coverage, and surface roughness of the substrate and deposited material can be calculated in the proposed routine.
Author: | Krzysztof Kolanek, Massimo TallaridaORCiD, Dieter SchmeißerORCiD |
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DOI: | https://doi.org/10.1116/1.4754557 |
Title of the source (English): | Journal of Vacuum Science and Technology : A |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2013 |
Tag: | Atomic force microscopy; Atomic layer deposition (ALD); HfO2; height distribution |
Volume/Year: | 31 |
Issue number: | 1 |
First Page: | 01A104-1 |
Last Page: | 01A104-9 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |