• search hit 3 of 22
Back to Result List

Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization

  • The authors propose the analysis of surface height histograms as a tool for the atomic layer deposition (ALD) growth characterization in the initial stage of the process. ALD of HfO2 on a Si(100)/SiO2 substrate was investigated in situ by ultra high vacuum atomic force microscope working in noncontact mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and H2O as precursors, were performed at 230 C. After each ALD cycle, the relation between the film growth and the root mean square surface roughness was studied. Parameters equivalent to HfO2 layer thickness, coverage, and surface roughness of the substrate and deposited material can be calculated in the proposed routine.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Krzysztof Kolanek, Massimo TallaridaORCiD, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1116/1.4754557
Title of the source (English):Journal of Vacuum Science and Technology : A
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2013
Tag:Atomic force microscopy; Atomic layer deposition (ALD); HfO2; height distribution
Volume/Year:31
Issue number:1
First Page:01A104-1
Last Page:01A104-9
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.