• search hit 4 of 6
Back to Result List

Statistical Analysis of Computer-simulated On-Chip Interconnect Electromigration Lifetimes under the Influence of Microstructure and Strengthened Top Interface

  • We are investigating the statistics of computer-simulated interconnect electromigration (EM) lifetimes with regard to the effects of microstructure and a strengthened top interface. The degradation process of EM once threatened the entire existence of integrated circuit industry in the 1960s and has remained a major reliability concern. Ongoing miniaturization and the introduction of new materials further complicate the task of EM-resistant chip manufacturing. We have developed a simple two-dimensional finite difference simulation that models the mass transport by electromigration along the grain boundaries and the top interface of interconnect segments that allows us to do calculations of void nucleation and growth. A parallel computer simulates hundreds of interconnects simultaneously and statistical analysis becomes feasible. A Monte Carlo grain growth algorithm (a modified Potts version) is applied to model the grain structure of the interconnect segments. We will show that the simulation can be used to compare simulation andWe are investigating the statistics of computer-simulated interconnect electromigration (EM) lifetimes with regard to the effects of microstructure and a strengthened top interface. The degradation process of EM once threatened the entire existence of integrated circuit industry in the 1960s and has remained a major reliability concern. Ongoing miniaturization and the introduction of new materials further complicate the task of EM-resistant chip manufacturing. We have developed a simple two-dimensional finite difference simulation that models the mass transport by electromigration along the grain boundaries and the top interface of interconnect segments that allows us to do calculations of void nucleation and growth. A parallel computer simulates hundreds of interconnects simultaneously and statistical analysis becomes feasible. A Monte Carlo grain growth algorithm (a modified Potts version) is applied to model the grain structure of the interconnect segments. We will show that the simulation can be used to compare simulation and experiment qualitatively. Four cases have been studied: interconnect segments with small/large grains and weak/strong top interface.show moreshow less

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Matthias Kraatz, Lijuan Zhang, Dieter SchmeißerORCiD, Ehrenfried ZschechORCiD, Paul S. Ho
URL:http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/7/contribution/2
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2011
First Page:S. 292
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.