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Monolithic integrated CMUTs fabricated by low temperature wafer bonding

  • Low temperature wafer bonding (temperature of 450°C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process.The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.

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Metadaten
Author: Mario Kupnik, Butrus T. Khuri-Yakub
Document Type:Patent
Language:English
Year of publication:2013
Patent number:US 8402831 B2
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Elektronische Systeme und Sensorik
Institution name at the time of publication:Fakultät für Maschinenbau, Elektrotechnik und Wirtschaftsingenieurwesen (eBTU) / LS Allgemeine Elektrotechnik und Messtechnik
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