High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution
- The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm.
Author: | Hans-Joachim Lewerenz, Chris Murrell, J. Jakubowicz, Mohammed Aggour, M. Kanis, S. A. Campbell, P. A. Cox, Patrick Hoffmann, H. Jungblut, Dieter SchmeißerORCiD |
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ISSN: | 1873-2569 |
Title of the source (English): | Journal of Electroanalytical Chemistry |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2003 |
Tag: | AFM; Electropolishing; Photoelectron spectroscopy; Porous Si; Synchrotron radiation; transistors |
Volume/Year: | 540 |
First Page: | 3 |
Last Page: | 6 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |