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Resonant Photoemission at the O1s threshold to characterize In2O3 single crystals

  • We report on spectroscopic investigations on In2O3 single crystals. We focus on the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy. We analyze the electronic structure and assign the O2p to build the valence band and both, O2p and In5s5p states to contribute to the conduction band (CB). We determine the partial density of states for the valence and CBs and find a strong hybridization of O2p and In5s states. This is deduced from constant final state spectra on the O-KLL-Auger over the O K-edge and In M4,5-edge and a comparison to the corresponding X-ray absorption spectroscopy data.We also identify several types of defects. A broad band of oxygen derived defects is identified that extends throughout the gap. These are attributed to small polarons which cause an anti-resonance in the valence states around the O1s threshold. In addition, a separate Auger decay at resonance indicates the existence of localized charge transfer states which involves localized In5s5p states.

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Metadaten
Author: Jörg Haeberle, Matthias RichterGND, Zbigniew GalazkaORCiD, Christoph JanowitzORCiD, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1016/j.tsf.2013.03.036
ISSN:0040-6090
ISSN:1879-2731
Title of the source (English):Thin Solid Films
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2014
Tag:Charge transfer; In2O3; Small polaron; TCO; X-ray spectroscopy
Volume/Year:2014
Issue number:555
First Page:53
Last Page:56
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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