Preparation, properties and electronic structure of SnO₂
- This chapter reports about tin oxide (SnO₂), a material which belongs to the transparent conducting oxide family and is best characterized by its high conductivity, high carrier mobility, and the ability to form p-type conductivity. We correlate these properties in terms of localized intrinsic electronic defect states which are resolved by resonant photoelectron spectroscopy measurements. We describe SnO₂ in terms of an inhomogeneous, mixed-ionic-covalent semiconductor in which these intrinsic electronic defects state are stabilized.
Author: | Karsten HenkelORCiDGND, Jörg Haeberle, Klaus Müller, Christoph JanowitzORCiD, Dieter SchmeißerORCiD |
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ISBN: | 978-0-08-102096-8 |
ISBN: | 978-0-08-102097-5 |
Title of the source (English): | Single Crystals of Electronic Materials |
Publisher: | Elsevier, Woodhead Publishing |
Place of publication: | Duxford |
Editor: | Robert Fornari |
Document Type: | Part of a book (chapter) |
Language: | English |
Year of publication: | 2018 |
Tag: | electronic structure; intrinsic defect states; resonant photoelectron spectroscopy; tin oxide (SnO₂) |
First Page: | 547 |
Last Page: | 572 |
Series ; volume number: | Woodhead Publishing Series in Electronic and Optical Materials |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |