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Preparation, properties and electronic structure of SnO₂

  • This chapter reports about tin oxide (SnO₂), a material which belongs to the transparent conducting oxide family and is best characterized by its high conductivity, high carrier mobility, and the ability to form p-type conductivity. We correlate these properties in terms of localized intrinsic electronic defect states which are resolved by resonant photoelectron spectroscopy measurements. We describe SnO₂ in terms of an inhomogeneous, mixed-ionic-covalent semiconductor in which these intrinsic electronic defects state are stabilized.

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Metadaten
Author: Karsten HenkelORCiDGND, Jörg Haeberle, Klaus Müller, Christoph JanowitzORCiD, Dieter SchmeißerORCiD
ISBN:978-0-08-102096-8
ISBN:978-0-08-102097-5
Title of the source (English):Single Crystals of Electronic Materials
Publisher:Elsevier, Woodhead Publishing
Place of publication:Duxford
Editor: Robert Fornari
Document Type:Part of a book (chapter)
Language:English
Year of publication:2018
Tag:electronic structure; intrinsic defect states; resonant photoelectron spectroscopy; tin oxide (SnO₂)
First Page:547
Last Page:572
Series ; volume number:Woodhead Publishing Series in Electronic and Optical Materials
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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