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Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

  • The process parameters’ impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiOxNy) films was studied. Titanium(IV)isopropoxide in combination with NH3 plasma and tetrakis(dimethylamino) titanium by applying N2 plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiOxNy films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.

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Metadaten
Author: Małgorzata Sowińska, Karsten HenkelORCiDGND, Dieter SchmeißerORCiD, Irina Kärkkänen, Jessica Schneidewind, Franziska NaumannORCiD, Bernd Gruska, Hassan Gargouri
DOI:https://doi.org/10.1116/1.4936227
ISSN:0734-2101
ISSN:1520-8559
Title of the source (English):Journal of Vacuum Science and Technology A
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:X-ray photoelectron spectroscopy; capacitance-voltage; current-voltage; ellipsometry; plasma enhanced atomic layer deposition; titanium oxynitride
Issue number:34
First Page:01A127-1
Last Page:01A127-9
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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