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Limiting the Output Power of Rugged GaN LNAs

  • Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.

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Metadaten
Author: Evelyne Kaule, Cristina Andrei, Stefan Gerlich, Ralf Dörner, Matthias Rudolph
DOI:https://doi.org/10.23919/EuMIC.2019.8909653
ISBN:978-2-87487-056-9
ISBN:978-1-7281-0768-4
Title of the source (English):14th European Microwave Integrated Circuits Conference (EuMIC)
Place of publication:Paris, France
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2019
Tag:Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver
First Page:240
Last Page:242
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik
Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Schaltkreisentwurf
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