• search hit 2 of 6
Back to Result List

p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study

  • The chemical and electronic properties of a- Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Dominic Gerlach, David Wippler, Regan G. Wilks, Manuel Wimmer, Mickaël Lozac'h, Roberto Felix Duarte, Shigenori Ueda, Hideki Yoshikawa, Klaus Lips, Bernd Rech, Masatomo Sumiya, Kaoru Kobayashi, Mihaela Gorgoi, Jürgen Hüpkes, Marcus Bär
ISSN:2156-3381
Title of the source (English):IEEE journal of photovoltaics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2013
Volume/Year:3
Issue number:1
First Page:483
Last Page:487
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.