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Photoelectron spectra of Al dopants in 4H-SiC

  • Al-doped 4H-SiC epitaxial layers were grown in a hot-wall chemical vapor deposition (CVD) system on commercial 4H-SiC substrates (CREE). The incorporation of Aluminum has been studied in the concentration range from 2*1014cm-3 up to 3*1020cm-3. Epitaxial layers with doping concentration NA-ND> 1019cm-3 were studied by HV-TEM and synchrotron radiation investigations. In the concentration range from 1*1019cm-3 to 3*1020 cm-3, measured by SIMS and Hall investigations, no Aluminum precipitation were detected in the grown layers. For SiC samples with an Al concentration of 1020cm-3 we have been able to detect the Al2p photoemission signal. The Al2p signal is recorded through the oxide layer (thickness of about 0.4nm), it has a main contribution at a binding energy of 73eV which corresponds to the energy typical for elemental Al0. In spectra excited with higher photon energies the sampled photoelectrons originate from deeper layers. In these data we notice an additional shoulder in the Al2p signal at around 71eV. The evidence of twoAl-doped 4H-SiC epitaxial layers were grown in a hot-wall chemical vapor deposition (CVD) system on commercial 4H-SiC substrates (CREE). The incorporation of Aluminum has been studied in the concentration range from 2*1014cm-3 up to 3*1020cm-3. Epitaxial layers with doping concentration NA-ND> 1019cm-3 were studied by HV-TEM and synchrotron radiation investigations. In the concentration range from 1*1019cm-3 to 3*1020 cm-3, measured by SIMS and Hall investigations, no Aluminum precipitation were detected in the grown layers. For SiC samples with an Al concentration of 1020cm-3 we have been able to detect the Al2p photoemission signal. The Al2p signal is recorded through the oxide layer (thickness of about 0.4nm), it has a main contribution at a binding energy of 73eV which corresponds to the energy typical for elemental Al0. In spectra excited with higher photon energies the sampled photoelectrons originate from deeper layers. In these data we notice an additional shoulder in the Al2p signal at around 71eV. The evidence of two contributions is attributed to the fact that Al is incorporated at different lattice sites. As the latter data represent more bulk like properties we argue that Al in the bulk SiC occupies both, substitutional lattice sites and interstitial sites while in the surface near regions Al is found only at substitutional lattice sites.show moreshow less

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Metadaten
Author: Dieter SchmeißerORCiD, Klaus Irmscher, Gerd WagnerGND
ISSN:0921-5107
ISSN:1873-4944
Title of the source (English):Materials Science & Engineering B
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2003
Tag:4H-SiC; Photoelectron; Spectra
Volume/Year:102
Issue number:1-3
First Page:284
Last Page:288
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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