High Yield Transferred Substrate InP DHBT
- A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3%SD, fmax = 250 GHz plusmn 5%SD at a breakdown voltage of BVceo = 6 V.
Author: | Thorsten Kraemer, Friedrich LenkGND, Andre Maaßdorf, Joachim Würfl, Günther Tränkle |
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DOI: | https://doi.org/10.1109/ICIPRM.2007.381210 |
ISBN: | 1-4244-0875-X |
Title of the source (English): | Indium Phosphide & Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007 |
Publisher: | IEEE |
Place of publication: | Piscataway, NJ |
Document Type: | Scientific journal article not peer-reviewed |
Language: | English |
Year of publication: | 2007 |
First Page: | 407 |
Last Page: | 408 |
Faculty/Chair: | Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik |
Institution name at the time of publication: | Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |