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Theory of charge-spin conversion at oxide interfaces: the inverse spin-galvanic effect

  • We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical approaches we investigate how the spin texture of the electron eigenstates due to the interplay of spin-orbit coupling and inversion asymmetry determines the sign of the induced spin polarization as a function of the chemical potential or band filling, both in the absence and presence of local disorder. With the latter, we find that the induced spin polarization evolves from a non monotonous behavior at zero temperature to a monotonous one at higher temperature. Our results may provide a sound framework for the interpretation of recent experiments.

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Metadaten
Author: Götz SeiboldORCiD, Sergio CapraraORCiD, Roberto Raimondi
URL:https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10732/107322P/Theory-of-charge-spin-conversion-at-oxide-interfaces--the/10.1117/12.2319592.short
DOI:https://doi.org/10.1117/12.2319592
Title of the source (English):Spintronics XI, SPIE Nanoscience + Engineering, 19-23 August 2018, San Diego, California, United States
Publisher:Spie
Place of publication:Bellingham, USA
Editor: Henri-Jean Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi, Henri Jaffrès
Document Type:Conference Proceeding
Language:English
Year of publication:2018
Series ; volume number:Proceedings of SPIE ; 10732
Article number:107322P
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Computational Physics
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