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Vanadium dioxide thin films on (100)- and (110)-oriented ruthenium dioxide islands

  • Bulk vanadium dioxide exhibits a metal-insulator transition at 68 ∘C. Because this change in resistivity is linked to a structural transition, the transition temperature can be tuned by epitaxial strain. Due to the high lattice mismatch of RuO2 with VO2, this substrate promises a highly shifted transition temperature, which enables new types of switching devices, smart coatings, and sensors. It is prepared by oxidizing a Ru(0001) crystal, providing micron-sized, (110)- as well as (100)-oriented RuO2 islands simultaneously. One of the challenges in preparing VO2 is to reliably meet the desired stoichiometry. We investigated the vanadium oxidation state using local XAS and XPS measurements taken at a synchrotron-based XPEEM instrument, revealing that VO2 stoichiometry is maintained throughout the entire film. This was found not only on RuO2(100) and RuO2(110), but also on the bare ruthenium substrate. The VO2 film thickness was determined to 3.6 nm by ex situ XRR measurements. Financial support from the DFG is acknowledged.

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Author: Simon FischerORCiD, Michael FoersterORCiD, Lucia AballeORCiDGND, Vedran VonkORCiD, Jens FaltaORCiD, Jon-Olaf KrisponeitORCiD, Jan Ingo FlegeORCiD
URL:https://www.dpg-verhandlungen.de/year/2019/conference/regensburg/part/o/session/37/contribution/5
ISSN:0420-0195
Title of the source (English):Verhandlungen der DPG
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference publication not peer-reviewed
Language:English
Year of publication:2019
Tag:local X-Ray absorption spectroscopy (XAS); local X-Ray photoelectron spectroscopy (XPS); strain; synchrotron-based XPEEM; transition temperature
First Page:330
Last Page:330
Series ; volume number:Verhandlungen der DPG (VI) ; 54, 4
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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