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Intergrain variations of the chemical and electronic surface structure of polycrystalline Cu(In,Ga)Se2 thin-film solar cell absorbers

  • The μm-scale spatial distribution of the elements of polycrystalline Cu(In1− x Ga x )Se2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x= Ga/(In+ Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.

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Author: Regan G. Wilks, Ingrid Repins, M. A. Contreras, Roberto Felix Duarte, J. Herrero-Albillos, L. Tati-Bismaths, F. Kronast, R. Noufi, Marcus Bär
ISSN:0003-6951
Title of the source (English):Applied Physics Letters
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2012
Volume/Year:101
Issue number:10
First Page:103908-1
Last Page:103908-4
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
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