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Photoemission and absorption spectroscopy for in situ investigations of the ALD growth

  • We have investigated the growth of Hf-oxide on Si by means of photoemission and X-ray absorption spectroscopy using synchrotron radiation at Bessy, Berlin. The Hf-oxide layers were grown via atomic layer deposition (ALD) using an in-situ ALD reactor attached to the investigation chamber. The XPS and XAS spectra were measured after every deposition cycle by transferring the sample into the investigation chamber without breaking the vacuum. From the experimental data we have obtained information about the early stages of the Hf-oxide growth, concerning in particular the reactivity of the interface with Si. Due to the possibility to study the layers after every cycle and with different oxidation parameters without exposing them to contaminants, the in situ investigation revealed to be a very important method to understand the growth properties of Hf-oxide.

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Author: Massimo TallaridaORCiD, Konstantin Karavaev, Dieter SchmeißerORCiD, Ehrenfried ZschechORCiD
URL:http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/ds/session/22/contribution/5
ISSN:0420-0195
Title of the source (English):Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2008
First Page:S. 242
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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