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In-depth characterization of switching dynamics in amorphous HfO2 memristive arrays for the implementation of synaptic updating rules

  • Accomplishing truly analog conductance modulation in memristive arrays is crucial in order to implement the synaptic plasticity in hardware-based neuromorphic systems. In this paper, such a feature was addressed by exploiting the inherent stochasticity of switching dynamics in amorphous HfO2 technology. A thorough statistical analysis of experimental characteristics measured in 4 kbit arrays by using trains of identical depression/potentiation pulses with different voltage amplitudes and pulse widths provided the key to develop two different updating rules and to define their optimal programming parameters. The first rule is based on applying a specific number of identical pulses until the conductance value achieves the desired level. The second one utilized only one single pulse with a particular amplitude to achieve the targeted conductance level. In addition, all the results provided by the statistical analysis performed may play an important role in understanding better the switching behavior of this particular technology.

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Author: Eduardo Perez, Mamathamba Kalishettyhalli Mahadevaiah, Emilio Perez-Bosch Quesada, Christian WengerORCiD
DOI:https://doi.org/10.35848/1347-4065/ac6a3b
ISSN:0021-4922
Title of the source (English):Japanese Journal of Applied Physics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:HfO2; RRAM; memristive device; memristive switching
Volume/Year:61
First Page:1
Last Page:7
Article number:SM 1007
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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