Dominic Gerlach, David Wippler, Regan G. Wilks, Manuel Wimmer, Mickaël Lozac'h, Roberto Felix Duarte, Shigenori Ueda, Hideki Yoshikawa, Klaus Lips, Bernd Rech, Masatomo Sumiya, Kaoru Kobayashi, Mihaela Gorgoi, Jürgen Hüpkes, Marcus Bär
- The chemical and electronic properties of a-
Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures
are studied by hard X-ray photoelectron spectroscopy (HAXPES).
Using a combination of different X-ray excitation energies
and deliberate sample design, we were able to select the probed
volume, i.e., the silicon capping layer only or the silicon and zinc
oxide layer (including the buried interface). For the a-Si:H(B) material,
we find a higher deposition rate and a smaller value for the
modified Auger parameter than for μc-Si:H(B). In addition, we
find indications of a pronounced band bending limited to the very
surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more
distinct in the latter case.