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Interface engineering of photoelectrochemically prepared Si surfaces

  • The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.

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Metadaten
Author: Hans-Joachim Lewerenz, Mohammed Aggour, Chris Murrell, M. Kanis, Patrick Hoffmann, H. Jungblut, Dieter SchmeißerORCiD
Document Type:Scientific journal article not peer-reviewed
Language:English
Year of publication:2002
Tag:Mean Free Paths; Range; Silicon
Quelle aus UBICO:Journal of Non-Crystalline Solids 303(2002)1, S. 1-5, 0022-3093
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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