• search hit 2 of 3
Back to Result List

The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

  • The electronic structure of the interface between the boron-doped oxygenated amorphous silicon “window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (−2.87 ± 0.27) eV and (−3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Mihaela Gorgoi, Dominic Gerlach, Regan G. Wilks, David Wippler, Manuel Wimmer, Mickaël Lozac'h, Roberto Felix Duarte, Leonie Anna Mück, M. Meier, Shigenori Ueda, Hideki Yoshikawa, Klaus Lips, Bernd Rech, Masatomo Sumiya, Jürgen Hüpkes, Kaoru Kobayashi, Marcus Bär
ISSN:1077-3118
Title of the source (English):Applied Physics Letters
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2013
Volume/Year:103
Issue number:2
First Page:023903
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.