Ionicity of ZnO - a key system for transparent conductive oxides
- The electronic structure of ZnO is dominated by coexisting electron and ionic states/bonds caused by charge polarization and self-trapping phenomena of the valence charges. Their interplay manifests itself in intrinsic electronic defects which have different degree of spatial localization and electronic correlation. The relative abundance of intrinsic defects can be determined by the ionicity factor fi and its value can be derived from three independent experimental procedures in a consistent way. This approach also explains the complex satellite features in the XPS and XAS data. Ionicity and satellite formation are two experimental findings which can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.
Author: | Dieter SchmeißerORCiD, Karsten HenkelORCiDGND, Christoph JanowitzORCiD |
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DOI: | https://doi.org/10.1209/0295-5075/123/27003 |
ISSN: | 1286-4854 |
ISSN: | 0295-5075 |
Title of the source (English): | epl : a letters journal exploring the frontiers of physics |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2018 |
Tag: | Ionicity; defect states; resonant photoelectron spectroscopy; transparent conductive oxide (TCO); zinc oxide (ZnO) |
Volume/Year: | 123 |
Issue number: | 2 |
First Page: | 27003-p1 |
Last Page: | 27003-p7 |
Article number: | ID 7003 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |