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Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation

  • An Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ. The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al2O3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L3MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by carefulAn Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ. The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al2O3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L3MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by careful selection of the process parameters.show moreshow less

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Author: Christoph JanowitzORCiD, Ali MahmoodinezhadORCiD, Małgorzata KotORCiD, Carlos MoralesORCiD, Franziska NaumannORCiD, Paul PlateORCiD, Marvin Hartwig ZöllnerORCiD, Florian BärwolfORCiD, David Stolarek, Christian WengerORCiD, Karsten HenkelORCiDGND, Jan Ingo FlegeORCiD
DOI:https://doi.org/10.1039/D1DT04008A
ISSN:1477-9234
ISSN:1477-9226
Title of the source (English):Dalton Transactions
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:ALD heterojunction; Al2O3; ZnO; band alignement; interface properties
Volume/Year:51
First Page:9291
Last Page:9301
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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