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Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations

  • We present a statistical procedure for the extraction of parameters of a compact model for memristive devices. Thereby, in a circuit simulation the typical fluctuations of the current–voltage (I-V) characteristics from device-to-device (D2D) and from cycle-to-cycle (C2C) can be emulated. The approach is based on the Stanford model whose parameters play a key role to integrating D2D and C2C dispersion. The influence of such variabilities over the model’s parameters is investigated by using a fitting algorithm fed with experimental data. After this, the statistical distributions of the parameters are used in a Monte Carlo simulation to reproduce the I-V D2D and C2C dispersions which show a good agreement to the measured curves. The results allow the simulation of the on/off current variation for the design of RRAM cells or memristor-based artificial neural networks.

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Metadaten
Author: Carl Bischoff, Jakob Leise, Emilio Perez-Bosch Quesada, Eduardo Perez, Christian WengerORCiD, Alexander Kloes
DOI:https://doi.org/10.1016/j.sse.2022.108321
ISSN:0038-1101
Title of the source (English):Solid-State Electronics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:HfO2; RRAM; circuit simulation
Volume/Year:194
Number of pages:4
Article number:108321
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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